Si PIN photodiode S3590-09
Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Bare chip type (unsealed)
-High quantum efficiency
-Low capacitance
-High-speed response
-High stability
-Good energy resolution
Notice
The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.
Before using this product, always read “Unsealed products / Precautions” described below.
Specifications
| Photosensitive area | 10 × 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Reverse voltage (max.) | 100 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.66 A/W |
| Dark current (max.) | 6000 pA |
| Cutoff frequency (typ.) | 40 MHz |
| Terminal capacitance (typ.) | 40 pF |
| Noise equivalent power (typ.) | 3.8×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted |
Spectral response
Dimensional outline (unit: mm)
