Si PIN photodiode S3590-08
Features
-Low capacitance
-High-speed response
-High stability
-Good energy resolution
-Sensitivity matching with BGO and CsI(TI) scintillators
Specifications
| Photosensitive area | 10 × 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Reverse voltage (max.) | 100 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.66 A/W |
| Dark current (max.) | 6000 pA |
| Cutoff frequency (typ.) | 40 MHz |
| Terminal capacitance (typ.) | 40 pF |
| Noise equivalent power (typ.) | 3.8×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted |
Spectral response
Dimensional outline (unit: mm)
