Si PIN photodiode S3584-08

S3584-08
Datasheet [582 KB/PDF]


Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

Specifications

Photosensitive area 28 × 28 mm
Number of elements 1
Package Ceramic
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 10 MHz
Terminal capacitance (typ.) 300 pF
Noise equivalent power (typ.) 8.6×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted

Spectral response

k_s3204-08_sr_xx.jpg

Dimensional outline (unit: mm)

KPINA0041

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